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Infineon | IAUT150N10S5N035ATMA1

Manufacturer Part #

IAUT150N10S5N035ATMA1

IAUT150Nxx Series 100 V 3.5 mOhm 150 A OptiMOS™-5 Power-Transistor-PG-HSOF-8-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2335
Product Specification Section
Infineon IAUT150N10S5N035ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 3.5mΩ
Rated Power Dissipation: 166W
Qg Gate Charge: 67nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 150A
Turn-on Delay Time: 12ns
Turn-off Delay Time: 23ns
Rise Time: 7ns
Fall Time: 26ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 4700pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
2,000
USA:
2,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
2000
Multiple Of:
2000
Total
$2,880.00
USD
Quantity
Unit Price
2,000
$1.44
4,000+
$1.42
Product Variant Information section