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Infineon | IMW120R060M1HXKSA1

Manufacturer Part #

IMW120R060M1HXKSA1

Single N-Channel 1200 V 36 A 150 W CoolSiC™ Through Hole Mosfet - TO-247-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2428
Product Specification Section
Infineon IMW120R060M1HXKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain-Source On Resistance-Max: 83mΩ
Rated Power Dissipation: 150W
Qg Gate Charge: 31nC
Gate-Source Voltage-Max [Vgss]: 23V
Drain Current: 36A
Turn-on Delay Time: 5.7ns
Turn-off Delay Time: 13ns
Rise Time: 7ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4.5V
Technology: SiC
Input Capacitance: 1060pF
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
240
Multiple Of:
30
Total
$1,144.80
USD
Quantity
Unit Price
30
$4.87
90
$4.80
150
$4.77
450
$4.70
750+
$4.63
Product Variant Information section