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Manufacturer Part #

IPB020N08N5ATMA1

Single N-Channel 80 V 2 mOhm 156 nC OptiMOS™ Power Mosfet - D2PAK-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB020N08N5ATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 2mΩ
Rated Power Dissipation: 300W
Qg Gate Charge: 133nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 173A
Turn-on Delay Time: 28ns
Turn-off Delay Time: 62ns
Rise Time: 16ns
Fall Time: 20ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 9300pF
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
1000
Total
$2,130.00
USD
Quantity
Unit Price
1,000
$2.13
2,000
$2.11
3,000
$2.10
4,000+
$2.09
Product Variant Information section