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Manufacturer Part #
IPD100N04S402ATMA1
IPD100N04S4 Series 40 V 2 mOhm 100 A OptiMOS®-T2 Power-Transistor - PG-TO252-3
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:2500 per Reel Package Style:TO-252-3 (DPAK) Mounting Method:Surface Mount | ||||||||||
| Date Code: | 2434 | ||||||||||
Infineon IPD100N04S402ATMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information Subject: Introduction of an additional wafer production and wafer test location at Infineon Technologies Dresden GmbH, Dresden, Germany and an additional wafer diameter for products IPD50N04S4-10, IPD75N04S4-06, IPB80N04S4-04, IPD100N04S4-02 and IPB180N04S4-00 Reason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in Villach and Kulim we have to extend wafer production and wafer
Part Status:
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- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IPD100N04S402ATMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/ipd100n04s402atma1-infineon-4098344
Infineon IPD100N04S402ATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 2mΩ |
| Rated Power Dissipation: | 150W |
| Qg Gate Charge: | 91nC |
| Gate-Source Voltage-Max [Vgss]: | 20V |
| Drain Current: | 100A |
| Turn-on Delay Time: | 23ns |
| Turn-off Delay Time: | 26ns |
| Rise Time: | 12ns |
| Fall Time: | 24ns |
| Operating Temp Range: | -55°C to +175°C |
| Gate Source Threshold: | 3V |
| Technology: | OptiMOS |
| Input Capacitance: | 7250pF |
| Package Style: | TO-252-3 (DPAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
2500 per Reel
Package Style:
TO-252-3 (DPAK)
Mounting Method:
Surface Mount