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Manufacturer Part #

IRFB7430PBF

Single N-Channel 40 V 1.3 mOhm 460 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2150
Product Specification Section
Infineon IRFB7430PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 1.3mΩ
Rated Power Dissipation: 375W
Qg Gate Charge: 460nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 409A
Turn-on Delay Time: 32ns
Turn-off Delay Time: 160ns
Rise Time: 105ns
Fall Time: 100ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3.9V
Technology: Si
Height - Max: 9.02mm
Length: 10.67mm
Input Capacitance: 14240pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
8 Weeks
Minimum Order:
1000
Multiple Of:
50
Total
$1,340.00
USD
Quantity
Unit Price
50
$1.38
200
$1.36
750
$1.34
1,500
$1.33
3,750+
$1.31
Product Variant Information section