Manufacturer Part #
IRFD210PBF
Single N-Channel 200 V 1.5 Ohms Through Hole Power Mosfet - HVMDIP-4
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:100 per Tube Package Style:DIP-4 Mounting Method:Through Hole | ||||||||||
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Vishay IRFD210PBF - Product Specification
Shipping Information:
ECCN:
PCN Information:
Description:No Physical, Process, or Location Changes We want to emphasize that products continue to be manufactured at the same locations, using the same equipment, materials, packaging, and process steps as before. There have been no changes to any aspect of the production process or sites involved.BackgroundThis alignment is part of a global initiative at Vishay to ensure consistent representation of CoO information across all divisions, based on international and national regulations, as well as World Trade Organization guidelines.Please NoteSome customers may have already noticed changes in the CoO information on documentation accompanying recent product deliveries. As part of this ongoing initiative, updates to the CoO may continue to appear over time in product documentation, where applicable. These changes align with the updated approach and do not reflect any physical changes to the products themselves.
Description of Change:Vishay Siliconix announces the end of life of commercial HVM Power MOSFET parts (low volume Gen 3) due to termination of 6-inch wafer foundry at Tower Semiconductor, IsraelReason for Change: Termination of 6-inch wafer foundry at Tower Semiconductor, Israel Last Time Buy Date: Mon Nov 18, 2024Last Time Ship Date: Sun May 18, 2025
Part Status:
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=Asia&field16=en&field2=IRFD210PBF&field4=Vishay&field18=https://p1apac.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfd210pbf-vishay-4383790
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=Asia&field16=en&field2=IRFD210PBF&field4=Vishay&field18=https://p1apac.futureelectronics.com/fr/p/semiconductors--discretes--transistors--mosfets/irfd210pbf-vishay-4383790
Vishay IRFD210PBF - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 200V |
| Drain-Source On Resistance-Max: | 1.5Ω |
| Rated Power Dissipation: | 1|W |
| Qg Gate Charge: | 8.2nC |
| Package Style: | DIP-4 |
| Mounting Method: | Through Hole |
Available Packaging
Package Qty:
100 per Tube
Package Style:
DIP-4
Mounting Method:
Through Hole