text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. ISZ0703NLSATMA1

Infineon | ISZ0703NLSATMA1

Manufacturer Part #

ISZ0703NLSATMA1

60V, 56A, 7.3MOHM, N-CHANNEL, PQFN 3.3 x 3.3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2330
Product Specification Section
Infineon ISZ0703NLSATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 7.3mΩ
Rated Power Dissipation: 2.5W
Qg Gate Charge: 17nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 13A
Turn-on Delay Time: 6.6ns
Turn-off Delay Time: 13ns
Rise Time: 1.8ns
Fall Time: 2.5ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.7V
Technology: OptiMOS
Input Capacitance: 1100pF
Series: OptiMOS 5
Package Style:  TSDSON-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
5,000
USA:
5,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,975.00
USD
Quantity
Unit Price
5,000
$0.395
10,000
$0.39
15,000
$0.385
20,000+
$0.38
Product Variant Information section