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Référence fabricant

NDC7002N

Double N-Channel 50 V 0.96 W 1 nC DMOS Surface Mount Mosfet - SSOT-6

Modèle ECAD:
Nom du fabricant: onsemi
Emballage standard:
Product Variant Information section
Code de date: 2509
Product Specification Section
onsemi NDC7002N - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 50V
Drain-Source On Resistance-Max:
Rated Power Dissipation: 0.96W
Qg Gate Charge: 1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 0.51A
Turn-on Delay Time: 6ns
Turn-off Delay Time: 11ns
Rise Time: 6ns
Fall Time: 5ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2.5V
Technology: DMOS
Input Capacitance: 20pF
Style d'emballage :  SSOT-6
Méthode de montage : Surface Mount
Fonctionnalités et applications

The NDC7002N Part Number is a Dual N-Channel enhancement mode power Field effect transistors, are produced using high cell density, DMOS technology.

This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. These device is particularly suited for low voltage, low current, switching, and power supply applications.

Features:

  • 0.51 A, 50 V.   RDS(ON) = 2 O @ VGS = 10 V
  • High density cell design for extremely low RDS(ON)
  • Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
  • High saturation current

Applications:

  • Automation
  • Broadband Access
  • Broadband Modem
  • Broadcast & Studio
  • Building & Home Control
  • Camcorder
Pricing Section
Stock global :
45 000
États-Unis:
45 000
Sur commande :
0
Stock d'usine :Stock d'usine :
0
Délai d'usine :
9 Semaines
Commande minimale :
3000
Multiples de :
3000
Total 
465,00 $
USD
Quantité
Prix unitaire
3 000
$0.155
9 000
$0.152
12 000
$0.151
30 000
$0.149
45 000+
$0.147
Product Variant Information section