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Manufacturer Part #

SI4925DDY-T1-GE3

DUAL P-CH MOSFET SO-8 30V 29MOHM @ 10V- LEAD(PB) AND HALOGEN FREE

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code: 2324
Product Specification Section
Vishay SI4925DDY-T1-GE3 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 0.041Ω
Rated Power Dissipation: 2.5W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 7.3A
Turn-on Delay Time: 42ns
Turn-off Delay Time: 45ns
Rise Time: 60ns
Fall Time: 30ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: Si
Height - Max: 1.55mm
Length: 5mm
Input Capacitance: 1350pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The SI4925DDY-T1-GE3 is a Dual P-Channel 30-V (D-S) MOSFET.

It has an Operating temperature ranges b/w -55 °C to 150 °C and it is available in a SO-8 package.

Features:

  • Halogen-free
  • TrenchFET® Power MOSFET
  • 100 % UIS Tested

Applications:

  • Load Switches
  • Notebook PCs
  • Desktop PCs
  • Game Stations
Pricing Section
Global Stock:
0
USA:
0
5,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$875.00
USD
Quantity
Unit Price
2,500
$0.35
5,000
$0.345
12,500+
$0.335
Product Variant Information section