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Manufacturer Part #

SQJB40EP-T1_GE3

Dual N-Channel 40 V 8 mohm 34 W TrenchFET Automotive Mosfet-PowerPAK SO-8 Dual

ECAD Model:
Mfr. Name: Vishay
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Vishay SQJB40EP-T1_GE3 - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 8mΩ
Rated Power Dissipation: 34W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 30A
Turn-on Delay Time: 7ns
Turn-off Delay Time: 18ns
Rise Time: 20ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.8V
Input Capacitance: 1415pF
Package Style:  POWERPAK-SO-8L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
40 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,635.00
USD
Quantity
Unit Price
3,000
$0.545
6,000
$0.54
9,000
$0.535
15,000+
$0.525
Product Variant Information section