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Manufacturer Part #

AIMW120R035M1HXKSA1

1200 V 5 2A 228 W N-Ch CoolSiC™ Automotive 1200V SiC Trench MOSFET-PG-TO247-3-41

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2404
Product Specification Section
Infineon AIMW120R035M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 52A
Input Capacitance: 2130pF
Power Dissipation: 228W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$721.20
USD
Quantity
Unit Price
30
$24.04
60
$23.90
90
$23.82
120
$23.76
150+
$23.57
Product Variant Information section