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  6. IMW120R030M1HXKSA1

Infineon | IMW120R030M1HXKSA1

Manufacturer Part #

IMW120R030M1HXKSA1

1200 V 56A 227W N-Channel Through Hole CoolSiC™ SiC Trench MOSFET-PG-TO247-3-41

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2340
Product Specification Section
Infineon IMW120R030M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 56A
Input Capacitance: 2120pF
Power Dissipation: 227W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-3
Mounting Method: Through Hole
Pricing Section
Global Stock:
240
USA:
240
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
14 Weeks
Minimum Order:
3
Multiple Of:
1
Total
$25.26
USD
Quantity
Unit Price
3
$8.42
15
$8.32
40
$8.26
100
$8.20
250+
$8.08
Product Variant Information section