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Manufacturer Part #

IMZA120R020M1HXKSA1

1200 V 98A 375W N-Channel Through Hole CoolSiC™ SiC Trench MOSFET-PG-TO247-4-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
Infineon IMZA120R020M1HXKSA1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 98A
Input Capacitance: 3460nF
Power Dissipation: 375W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
90
USA:
90
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
30
Multiple Of:
30
Total
$372.30
USD
Quantity
Unit Price
30
$12.41
60
$12.35
90
$12.31
150
$12.26
300+
$12.15
Product Variant Information section