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  6. NVH4L080N120SC1

onsemi | NVH4L080N120SC1

Manufacturer Part #

NVH4L080N120SC1

N-Channel 1200 V 29 A 170 W Through Hole Silicon Carbide MOSFET - TO-247-4L
ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi NVH4L080N120SC1 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 1200V
Drain Current: 29A
Input Capacitance: 1670pF
Power Dissipation: 170W
Operating Temp Range: -55°C to +175°C
Package Style:  TO-247-4L
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
3
Factory Lead Time:
12 Weeks
Minimum Order:
450
Multiple Of:
450
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$2,817.00
USD
Quantity
Unit Price
4
$6.42
20
$6.35
75
$6.30
200
$6.26
750+
$6.17
Product Variant Information section