Microchip | SST39VF010-70-4I-NHE

The SST39VF010-70-4I-NHE is a 1 Mbit multi-purpose flash memory device. It is available in 32 pin PLCC package.

This device is manufactured with SST proprietary, high performance CMOS SuperFlash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches.

Features:

• Organized as 64K x8 / 128K x8 / 256K x8 / 512K x8
• Single Voltage Read and Write Operations– 3.0-3.6V for SST39LF512/010/020/040– 2.7-3.6V for
• ST39VF512/010/020/040
• Superior Reliability– Endurance: 100,000 Cycles (typical)– Greater than 100 years Data Retention
• Low Power Consumption(typical values at 14 MHz)– Active Current: 5 mA (typical)– Standby Current: 1 µA (typical)
• Sector-Erase Capability– Uniform 4 KByte sectors
• Fast Read Access Time:– 45 ns for SST39LF512/010/020/040– 55 ns for SST39LF020/040– 70 ns for
• ST39VF512/010/020/040
• Latched Address and Data
• Fast Erase and Byte-Program:– Sector-Erase Time: 18 ms (typical)– Chip-Erase Time: 70 ms (typical)– Byte-Program Time: 14 µs (typical)– Chip Rewrite Time:1 second (typical) for SST39LF/VF5122 seconds (typical) for SST39LF/VF0104 seconds (typical) for SST39LF/VF0208 seconds (typical) for SST39LF/VF040
• Automatic Write Timing– Internal VPP Generation
• End-of-Write Detection– Toggle Bit– Data# Polling
• CMOS I/O Compatibility
• JEDEC Standard– Flash EEPROM Pinouts and command sets
• Packages Available– 32-lead PLCC– 32-lead TSOP (8mm x 14mm)– 48-ball TFBGA (6mm x 8mm)– 34-ball WFBGA (4mm x 6mm) for 1M and 2M
• All devices are RoHS compliant