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Référence fabricant

STTH810G-TR

STTH810 Series 8 A 1.3 V 85 ns Ultrafast Recovery Diode Surface Mount - D2PAK

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STTH810G-TR - Caractéristiques techniques
Attributes Table
Average Rectified Current-Max: 8A
Peak Current-Max: 60A
Reverse Voltage-Max [Vrrm]: 1000V
Reverse Current-Max: 5µA
Forward Voltage: 2V
Configuration: Single
Forward RMS Current [If rms]: 30A
Diode Capacitance-Max: 3pF
Reverse Recovery Time-Max: 85ns
Thermal Resistance: 2.5°C/W
Operating Temp Range: 175°C
Storage Temperature Range: -65°C to +175°C
Style d'emballage :  TO-263-3 (D2PAK)
Méthode de montage : Surface Mount
Fonctionnalités et applications

The STTH810G-TR is a high quality design of this diode has produced a device with low leakage current, regularly reproducible characteristics and intrinsic ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability.

The improved performance in low leakage current, and therefore thermal runaway guard band, is an immediate competitive advantage for this device.

Features:

  • Ultrafast, soft recovery
  • Very low conduction and switching losses
  • High frequency and/or high pulsed current operation
  • High reverse voltage capability
  • High junction temperature
  • Insulated packages:
    • TO-220Ins
    • Electrical insulation = 2500 VRM Capacitance = 7 pF
    • TO-220FPAC
  • Electrical insulation = 2500 VRMS
  • Capacitance = 12 pF
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
25 Semaines
Commande minimale :
2000
Multiples de :
1000
Total 
860,00 $
USD
Quantité
Prix unitaire
1 000
$0.435
2 000
$0.43
3 000
$0.425
4 000+
$0.42
Product Variant Information section