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Manufacturer Part #
IGB110S101XTMA1
100 V 23 A 9.4 mOhm N-Channel PQFN 3x3 GaN MOSFET
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section | ||||||||||
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Product Specification Section
Infineon IGB110S101XTMA1 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
- https://futureelec.wufoo.com/forms/?formname=r8bzou01ws8brs&field12=NA&field16=en&field2=IGB110S101XTMA1&field4=Infineon&field18=https://p1na.futureelectronics.com/it/p/semiconductors--discretes--transistors--gallium-nitride-mosfets-gan-mosfets/igb110s101xtma1-infineon-1206344
Infineon IGB110S101XTMA1 - Technical Attributes
Attributes Table
| Technology: | GaNFET (Gallium Nitride) |
| Fet Type: | N-Ch |
| Drain Current: | 9A |
| No of Channels: | 1 |
| Qg Gate Charge: | 4.4nC |
| Drain-to-Source Voltage [Vdss]: | 100V |
| Gate-Source Voltage-Max [Vgss]: | 6.5V |
| Input Capacitance: | 340pF |
| Rated Power Dissipation: | 15W |
| Operating Temp Range: | -40°C to +150°C |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
16 Weeks
Quantity
Unit Price
5,000+
$0.66
Product Variant Information section