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Infineon | IKD04N60RC2ATMA1

Manufacturer Part #

IKD04N60RC2ATMA1

Transistor IGBT Chip N-Channel 600V 8A 3-Pin PG-TO-252 T/R

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IKD04N60RC2ATMA1 - Technical Attributes
Attributes Table
CE Voltage-Max: 600V
Collector Current @ 25C: 8A
Power Dissipation-Tot: 36.6W
Gate - Emitter Voltage: 20V
Pulsed Collector Current: 12A
Collector - Emitter Saturation Voltage: 2V
Turn-on Delay Time: 4ns
Turn-off Delay Time: 90ns
Qg Gate Charge: 24nC
Reverse Recovery Time-Max: 80ns
Leakage Current: 100nA
Input Capacitance: 180pF
Operating Temp Range: -40°C to +175°C
No of Terminals: 3
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
7,500
Factory Stock:Factory Stock:
0
Factory Lead Time:
19 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$662.50
USD
Quantity
Unit Price
2,500
$0.265
7,500
$0.26
25,000+
$0.255
Product Variant Information section