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onsemi | BS170

Manufacturer Part #

BS170

N-Channel 60 V 5 Ohm Enhancement Mode Field Effect Transistor - TO-92

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2526
Product Specification Section
onsemi BS170 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 5Ω
Rated Power Dissipation: 830|mW
Package Style:  TO-92
Mounting Method: Through Hole
Features & Applications

The BS170 is a BS170 Series 60 V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor-TO-92-3 package .

These N-Channel enhancement mode field effect transistors are high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Product Features:

  • High density cell design for extremely low RDS(ON).
  • Voltage controlled small signal switch.
  • Rugged and reliable.
  • High saturation current capability.

Applications:

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • Video Game Console
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Medical Electronics/Devices
  • Routers & LAN Switches
Pricing Section
Global Stock:
18,478
USA:
18,478
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
23 Weeks
Minimum Order:
200
Multiple Of:
1
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$19.72
USD
Quantity
Unit Price
200
$0.0986
500
$0.0963
1,500
$0.0936
3,000
$0.092
10,000+
$0.087
Product Variant Information section