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Diodes Incorporated | DMN3026LVT-7

Manufacturer Part #

DMN3026LVT-7

Single N-Channel 30 V 30 mOhm 12.5 nC 1.5 W Silicon Mosfet - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3026LVT-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 30MΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 12.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.6A
Turn-on Delay Time: 2.2ns
Turn-off Delay Time: 12.1ns
Rise Time: 2.5ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 0.9mm
Length: 2.9mm
Input Capacitance: 643pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
Singapore:
0
On Order:
0
Factory Stock:Factory Stock:
27,000
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$261.90
USD
Quantity
Unit Price
3,000
$0.0873
6,000
$0.0858
12,000
$0.0844
15,000
$0.084
45,000+
$0.0812
Product Variant Information section