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  6. DMN3026LVT-7

Diodes Incorporated | DMN3026LVT-7

Manufacturer Part #

DMN3026LVT-7

Single N-Channel 30 V 30 mOhm 12.5 nC 1.5 W Silicon Mosfet - TSOT-26

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3026LVT-7 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 30MΩ
Rated Power Dissipation: 1.5W
Qg Gate Charge: 12.5nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.6A
Turn-on Delay Time: 2.2ns
Turn-off Delay Time: 12.1ns
Rise Time: 2.5ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Technology: Si
Height - Max: 0.9mm
Length: 2.9mm
Input Capacitance: 643pF
Package Style:  TSOT-26
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
3000
Multiple Of:
3000
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Total
$240.00
USD
Quantity
Unit Price
3,000
$0.08
9,000
$0.078
15,000
$0.0771
45,000
$0.0753
75,000+
$0.0736
Product Variant Information section