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Diodes Incorporated | DMN3032LFDBQ-13

Manufacturer Part #

DMN3032LFDBQ-13

DMN3032 Series 30 V 6.2 A 30 mOhm SMT Dual N-Channel MOSFET - U-DFN2020-6

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMN3032LFDBQ-13 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 30mΩ
Rated Power Dissipation: 1W to 1.7W
Qg Gate Charge: 10.6nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 6.2A
Turn-on Delay Time: 2.2ns
Turn-off Delay Time: 9.7ns
Rise Time: 2.6ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 2V
Height - Max: 0.56mm
Length: 2mm
Input Capacitance: 500pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:Order inventroy details
40,000
Factory Stock:Factory Stock:
0
Factory Lead Time:
24 Weeks
Minimum Order:
10000
Multiple Of:
10000
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,980.00
USD
Quantity
Unit Price
10,000
$0.198
20,000
$0.196
30,000
$0.194
40,000+
$0.193
Product Variant Information section