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Diodes Incorporated | DMP6110SSD-13

Manufacturer Part #

DMP6110SSD-13

Dual P-Channel 60 V 130 mOhm 8.2 nC 1.8 W Silicon SMT Mosfet - SOIC-8

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code: 2534
Product Specification Section
Diodes Incorporated DMP6110SSD-13 - Technical Attributes
Attributes Table
Fet Type: Dual P-Ch
No of Channels: 2
Drain-to-Source Voltage [Vdss]: -60V
Drain-Source On Resistance-Max: 130mΩ
Rated Power Dissipation: 1.8W
Qg Gate Charge: 8.2nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: -3.3A
Turn-on Delay Time: 4.4ns
Turn-off Delay Time: 34ns
Rise Time: 23ns
Fall Time: 42ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: -3V
Technology: Si
Height - Max: 1.75mm
Length: 4.95mm
Input Capacitance: 969pF
Package Style:  SOIC-8
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$512.50
USD
Quantity
Unit Price
2,500
$0.205
5,000
$0.20
10,000
$0.198
12,500
$0.197
37,500+
$0.193
Product Variant Information section