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Diodes Incorporated | DMTH10H005LCT

Manufacturer Part #

DMTH10H005LCT

DMTH10Hxx Series 100 V 140 A N-Channel Enhancement Mode Mosfet - TO-220AB

ECAD Model:
Mfr. Name: Diodes Incorporated
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Diodes Incorporated DMTH10H005LCT - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 5mΩ
Rated Power Dissipation: 2.9W
Qg Gate Charge: 114nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 140A
Turn-on Delay Time: 25ns
Turn-off Delay Time: 83.6ns
Rise Time: 26.9ns
Fall Time: 53.1ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 1.9V
Input Capacitance: 3688pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
3,800
Factory Lead Time:
24 Weeks
Minimum Order:
50
Multiple Of:
50
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$63.50
USD
Quantity
Unit Price
50
$1.27
200
$1.25
750
$1.24
2,000
$1.23
5,000+
$1.20
Product Variant Information section