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onsemi | FCB20N60TM

Manufacturer Part #

FCB20N60TM

FCB20N60 Series 600 V 20 A 190 mOhm N-Channel SuperFET® MOSFET - D2PAK-3

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi FCB20N60TM - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 0.19Ω
Rated Power Dissipation: 208|W
Qg Gate Charge: 75nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications

The FCB20N60TM is a part of FCB20N60F Series 600 V 0.19 Ω SuperFET new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy

Features:

  • 650V @TJ = 150°C
  • Typ. RDS(on) = 0.15 Ω
  • Ultra low gate charge (typ. Qg = 75nC)
  • Low effective output capacitance (typ. Coss.eff = 165 pF)
  • 100% avalanche tested
  • RoHS Compliant

Applications:

  • AC/DC power conversion
  • Switching mode Power supply
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
121,600
Factory Lead Time:
14 Weeks
Minimum Order:
800
Multiple Of:
800
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,456.00
USD
Quantity
Unit Price
800
$1.82
1,600
$1.80
3,200
$1.79
4,000+
$1.77
Product Variant Information section