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Manufacturer Part #
FCH47N60F-F133
MOSFET 600V N-Channel MOSFET
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| Mfr. Name: | onsemi | ||||||||||
| Standard Pkg: |
Product Variant Information section
Available PackagingPackage Qty:450 per Tube Package Style:TO-247-3 Mounting Method:Through Hole |
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| Date Code: | 2532 | ||||||||||
onsemi FCH47N60F-F133 - Product Specification
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onsemi FCH47N60F-F133 - Technical Attributes
| Product Status: | Active |
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 600V |
| Drain-Source On Resistance-Max: | 73mΩ |
| Rated Power Dissipation: | 417W |
| Qg Gate Charge: | 210nC |
| Gate-Source Voltage-Max [Vgss]: | 30V |
| Drain Current: | 47A |
| Turn-on Delay Time: | 185ns |
| Turn-off Delay Time: | 520ns |
| Rise Time: | 210ns |
| Fall Time: | 75ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 5V |
| Input Capacitance: | 5900pF |
| Series: | SUPERFET |
| Package Style: | TO-247-3 |
| Mounting Method: | Through Hole |
Features & Applications
The FCH47N60F_F133 is apart of FCH47N60 Series 600 V 0.07 Ω N-Channel SuperFET new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC/DC
power conversion in switching mode operation for system miniaturization and higher efficiency.
Features:
- 650 V @TJ = 150°C
- Typ. Rds(on)=0.058 Ω
- Ultra low gate charge (typ. Qg=210nC)
- Low effective output capacitance (typ. Coss.eff=420 pF)
- 100% avalanche tested
- RoHS Compliant
Applications:
Available Packaging
Package Qty:
450 per Tube
Package Style:
TO-247-3
Mounting Method:
Through Hole