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onsemi | FDC6301N

Manufacturer Part #

FDC6301N

Dual N-Channel 25 V 4 Ohm Surface Mount Digital FET - SSOT-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2434
Product Specification Section
onsemi FDC6301N - Technical Attributes
Attributes Table
Fet Type: Dual N-Ch
Drain-to-Source Voltage [Vdss]: 25V
Drain-Source On Resistance-Max: 4Ω
Rated Power Dissipation: 0.7|W
Qg Gate Charge: 0.7nC
Package Style:  SSOT-6
Mounting Method: Surface Mount
Features & Applications

The FDC6301N is a 25 V 4 Ohm Surface Mount Dual N-Channel Digital FET in a SSOT-6 package .

These dual N-Channel logic level enhancement mode field effect transistors are produced using a very high density process especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors. Since bias resistors are not required, these N-Channel FET's can replace several digital transistors, with a variety of bias resistors.

Product Features :

  • 25 V, 0.22 A continuous, 0.5 A Peak. RDS(ON) = 5 Ω @ VGS= 2.7 V, RDS(ON) = 4 Ω @ VGS= 4.5 V.
  • Very low level gate drive requirements allowing direct operation in 3 V circuits. VGS(th) 1.5 V.
  • Gate-Source Zener for ESD ruggedness. 6 kV Human Body Model

Applications :

  • AC-DC Merchant Power Supply - Video game console, flat Panel TV, DVR, STB
  • External AC-DC Merchant Power Supply - Wireless Communications
  • Wireless LAN Card & Broadband Access
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
9 Weeks
Minimum Order:
9000
Multiple Of:
3000
Total
$1,314.00
USD
Quantity
Unit Price
3,000
$0.149
9,000
$0.146
30,000
$0.143
45,000+
$0.141
Product Variant Information section