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onsemi | FDS3590

Manufacturer Part #

FDS3590

N-Channel 80 V 39 mOhm PowerTrench Mosfet - SOIC-8

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
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Product Specification Section
onsemi FDS3590 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 39mΩ
Rated Power Dissipation: 2.5|W
Qg Gate Charge: 25nC
Package Style:  SOIC-8
Mounting Method: Surface Mount
Features & Applications

The FDS3590 is a 80 V 39 mΩN-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

Features:

  • Back to Top6. 5 A, 80 V
  • RDS(on) = 39 mΩ @ VGS = 10 V
  • RDS(on) = 44 mΩ @ VGS = 6 V
  • Low gate charge
  • Fast switching speed
  • High performance trench technology for extremelylow RDS(ON)
  • High power and current handling capability

Applications:

  • DC/DC converters
  • Building & Home Control
  • Medical Electronics/Devices
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
32 Weeks
Minimum Order:
2500
Multiple Of:
2500
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$1,625.00
USD
Quantity
Unit Price
2,500
$0.65
5,000
$0.64
7,500
$0.635
12,500+
$0.62
Product Variant Information section