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Infineon | IPB019N08N5ATMA1

Manufacturer Part #

IPB019N08N5ATMA1

80Volt,180amp,1.95mohm,99nCQg typ, D2PAK7

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPB019N08N5ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 80V
Drain-Source On Resistance-Max: 1.95mΩ
Rated Power Dissipation: 224W
Qg Gate Charge: 99nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 180A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 41ns
Rise Time: 11ns
Fall Time: 15ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 3V
Technology: OptiMOS
Input Capacitance: 6900pF
Series: OptiMOS 5
Package Style:  TO-263-7 (D2PAK7)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
N/A
Minimum Order:
1000
Multiple Of:
1000
Total
$1,620.00
USD
Quantity
Unit Price
1,000
$1.62
2,000
$1.60
4,000
$1.59
5,000+
$1.58
Product Variant Information section