text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. IPD048N06L3GATMA1

Infineon | IPD048N06L3GATMA1

Manufacturer Part #

IPD048N06L3GATMA1

IPD048N Series N-Channel 60 V 90A 115W Surface Mount MOSFET TO252-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2543
Product Specification Section
Infineon IPD048N06L3GATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 4.8mΩ
Rated Power Dissipation: 115W
Qg Gate Charge: 50nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 90A
Turn-on Delay Time: 11ns
Turn-off Delay Time: 56ns
Rise Time: 5ns
Fall Time: 12ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 2.2V
Technology: OptiMOS
Input Capacitance: 8400pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,387.50
USD
Quantity
Unit Price
2,500
$0.555
5,000
$0.545
7,500
$0.54
12,500+
$0.53
Product Variant Information section