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Manufacturer Part #

IPD110N12N3GATMA1

Single N-Channel 120 V 11 mOhm 49 nC OptiMOS™ Power Mosfet - DPAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD110N12N3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 120V
Drain-Source On Resistance-Max: 11mΩ
Rated Power Dissipation: 136|W
Qg Gate Charge: 49nC
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
11 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$2,212.50
USD
Quantity
Unit Price
2,500
$0.885
5,000
$0.875
7,500+
$0.865
Product Variant Information section