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Manufacturer Part #

IPD60R210PFD7SAUMA1

N-Channel 650 V 16 A 210 mOhm Surface Mount Mosfet - PG-TO252-3-344

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPD60R210PFD7SAUMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 210mΩ
Rated Power Dissipation: 64W
Qg Gate Charge: 23nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 16A
Turn-on Delay Time: 20ns
Turn-off Delay Time: 57ns
Rise Time: 16ns
Fall Time: 7ns
Operating Temp Range: -40°C to +150°C
Gate Source Threshold: 4.5V
Input Capacitance: 1015pF
Package Style:  TO-252-3 (DPAK)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
2500
Multiple Of:
2500
Total
$1,862.50
USD
Quantity
Unit Price
2,500
$0.745
5,000
$0.735
7,500
$0.73
10,000+
$0.72
Product Variant Information section