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Infineon | IPN80R600P7ATMA1

Manufacturer Part #

IPN80R600P7ATMA1

N-Channel 800 V 8 A 7.4 W CoolMOS P7 Power Transistor MOSFET - PG-SOT-223

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPN80R600P7ATMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 800V
Drain-Source On Resistance-Max: 0.6Ω
Rated Power Dissipation: 7.4W
Qg Gate Charge: 20nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 8A
Turn-on Delay Time: 8ns
Turn-off Delay Time: 40ns
Rise Time: 8ns
Fall Time: 10ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3V
Technology: CoolMOS
Input Capacitance: 570pF
Series: CoolMOS P7
Package Style:  SOT-223 (TO-261-4)
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
3000
Multiple Of:
3000
Total
$1,815.00
USD
Quantity
Unit Price
3,000
$0.605
6,000
$0.595
9,000
$0.59
12,000+
$0.585
Product Variant Information section