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Infineon | IRFB3306PBFXKMA1

Manufacturer Part #

IRFB3306PBFXKMA1

MOSFET, 60V 120A, 4.2MOHM, N-CH, D2PAK

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2521
Product Specification Section
Infineon IRFB3306PBFXKMA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 60V
Drain-Source On Resistance-Max: 4.2mΩ
Rated Power Dissipation: 230W
Qg Gate Charge: 85nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 160A
Turn-on Delay Time: 15ns
Turn-off Delay Time: 40ns
Rise Time: 76ns
Fall Time: 77ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 4520pF
Series: HEXFET
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
40,500
USA:
40,500
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$32.00
USD
Quantity
Unit Price
50
$0.64
250
$0.625
1,000
$0.605
2,500
$0.595
6,250+
$0.575
Product Variant Information section