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  6. NP109N04PUG-E1-AY

Renesas | NP109N04PUG-E1-AY

Manufacturer Part #

NP109N04PUG-E1-AY

NP109N04PUG N-Channel 40 V 2.3 mOhm 220 W 180 nC Switching MosFet - TO-263

ECAD Model:
Mfr. Name: Renesas
Standard Pkg:
Product Variant Information section
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Product Specification Section
Renesas NP109N04PUG-E1-AY - Technical Attributes
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 40V
Drain-Source On Resistance-Max: 2.3mΩ
Rated Power Dissipation: 220|W
Qg Gate Charge: 180nC
Package Style:  TO-263-3 (D2PAK)
Mounting Method: Surface Mount
Features & Applications
The NP109N04PUG-E1-AY is a part of NP109N04PUG series N-Channel switching power MOSFET. It has a storage temperature ranging from -55°C to +175°C and its available in TO-263 package.

The NP109N04PUG is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features:

  • Super low on-state resistance
    • RDS(on) = 2.3mO MAX. (VGS = 10 V, ID = 55 A)
  • High current rating ID(DC) = ±110 A

View the NP1 Series of N-Channel Power Mosfets

Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
12 Weeks
Minimum Order:
800
Multiple Of:
800
Total
$1,824.00
USD
Quantity
Unit Price
800
$2.28
1,600
$2.26
2,400
$2.25
4,000+
$2.22
Product Variant Information section