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Manufacturer Part #
SIHP11N80AE-GE3
Single N-Channel 800 V 450 mOhm 78 W Flange Mount Power Mosfet - TO-220
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Tube Package Style:TO-220-3 (TO-220AB) Mounting Method:Through Hole | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SIHP11N80AE-GE3 - Product Specification
Shipping Information:
Item cannot ship to certain countries. See List
Item cannot ship to following countries:
ECCN:
EAR99
PCN Information:
File
Date
Location Change
01/02/2025 Details and Download
Description of Change: To meet increasing demand for commercial Power MOSFET products, Vishay Siliconix announces the qualification of wafer back-grind and back-metallization (BGBM) on Super Junction Commercial Power MOSFETs at in-house Siliconix Philippines Inc. (SPI) Facility in Binan, Philippines.Reason for Change: Manufacturing Capacity Expansion
Part Status:
Active
Active
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Vishay SIHP11N80AE-GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| No of Channels: | 1 |
| Drain-to-Source Voltage [Vdss]: | 800V |
| Drain-Source On Resistance-Max: | 450mΩ |
| Rated Power Dissipation: | 78W |
| Qg Gate Charge: | 42nC |
| Gate-Source Voltage-Max [Vgss]: | ±30V |
| Drain Current: | 8A |
| Turn-on Delay Time: | 26ns |
| Turn-off Delay Time: | 50ns |
| Rise Time: | 30ns |
| Fall Time: | 54ns |
| Operating Temp Range: | -55°C to +150°C |
| Gate Source Threshold: | 4V |
| Technology: | MDmesh |
| Input Capacitance: | 804pF |
| Package Style: | TO-220-3 (TO-220AB) |
| Mounting Method: | Through Hole |
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
20 Weeks
Quantity
Unit Price
20
$1.06
75
$1.04
250
$1.01
1,000
$0.98
3,000+
$0.935
Product Variant Information section
Available Packaging
Package Qty:
1000 per Tube
Package Style:
TO-220-3 (TO-220AB)
Mounting Method:
Through Hole