Manufacturer Part #
SQJ960EP-T1_GE3
Single N-Channel 60 V 0.040 Ohms Surface Mount Power Mosfet - PowerPAK-SO-8L
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| Mfr. Name: | Vishay | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:3000 per Reel Package Style:POWERPAK-SO-8L Mounting Method:Surface Mount | ||||||||||
| Date Code: | |||||||||||
Product Specification Section
Vishay SQJ960EP-T1_GE3 - Product Specification
Shipping Information:
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ECCN:
EAR99
PCN Information:
N/A
File
Date
Part Status:
Active
Active
Vishay SQJ960EP-T1_GE3 - Technical Attributes
Attributes Table
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 60V |
| Drain-Source On Resistance-Max: | 0.04Ω |
| Rated Power Dissipation: | 34|W |
| Qg Gate Charge: | 20nC |
| Package Style: | POWERPAK-SO-8L |
| Mounting Method: | Surface Mount |
Features & Applications
The SQJ960EP-T1-GE3 is a Part of the SQ Automotive Series N-Channel 60 V (D-S) 175 °C MOSFETs.
The Vishay Siliconix SQ series of AEC Q101 qualified power MOSFETs are produced using a special process design that is optimized for automotive excellence. Featuring low on-resistance n- and p-channel TrenchFET® technologies, these automotive power MOSFETs are rated for a maximum junction temperature of 175 °C.
Features:
- Superior performance based on leading TrenchFET® Power MOSFET technology
- AEC Q101 Qualified
- Rated at 175°C
- Best in class RDS(on) performance
- Rugged transistor technology, 100 % Rg Tested
- Halogen-free per IEC 61249-2-21 Definition
- Typical ESD Protection: 800 V
- Compliant to RoHS Directive 2002/95/EC
- PPAK SO-8 package to reduce DPAK size by ~50% with increased current density to 60A
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Lead Time:
25 Weeks
Quantity
Unit Price
3,000
$1.02
6,000+
$1.01
Product Variant Information section
Available Packaging
Package Qty:
3000 per Reel
Package Style:
POWERPAK-SO-8L
Mounting Method:
Surface Mount