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Référence fabricant

STP12NM50FP

N-Channel 550 V 0.35 Ohm Flange Mount MDmesh™ Power MosFet - TO-220FP

Modèle ECAD:
Nom du fabricant: STMicroelectronics
Emballage standard:
Product Variant Information section
Code de date:
Product Specification Section
STMicroelectronics STP12NM50FP - Caractéristiques techniques
Attributes Table
Fet Type: N-Ch
Drain-to-Source Voltage [Vdss]: 550V
Drain-Source On Resistance-Max: 0.35Ω
Rated Power Dissipation: 35|W
Qg Gate Charge: 39nC
Style d'emballage :  TO-220FP (TO-220FPAB)
Fonctionnalités et applications

The STP12NM50FP is a N-channel MDmesh™ Power MOSFET. The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. It has an Operating temperature ranges b/w -65 °C to 150 °C and available in  TO-220FP package. 

Features:

  • 100% avalanche tested
  • High dv/dt and avalanche capabilities
  • Low input capacitance and gate charge
  • Low gate input resistance
  • Tight process control and high manufacturing yields

Applications:

  • Switching applications
Pricing Section
Stock global :
0
États-Unis:
0
Sur commande :
0
Stock d'usine :Stock d'usine :
-1
Délai d'usine :
14 Semaines
Commande minimale :
1000
Multiples de :
50
Total 
2 380,00 $
USD
Quantité
Prix unitaire
50
$2.44
200
$2.40
500
$2.38
1 250
$2.35
2 000+
$2.32
Product Variant Information section