Référence fabricant
STP12NM50FP
N-Channel 550 V 0.35 Ohm Flange Mount MDmesh™ Power MosFet - TO-220FP
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| Nom du fabricant: | STMicroelectronics | ||||||||||
| Emballage standard: | Product Variant Information section Emballages disponiblesQté d'emballage(s) :50 par Tube Style d'emballage :TO-220FP (TO-220FPAB) | ||||||||||
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STMicroelectronics STP12NM50FP - Spécifications du produit
Informations de livraison:
ECCN:
Informations PCN:
Statut du produit:
STMicroelectronics STP12NM50FP - Caractéristiques techniques
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 550V |
| Drain-Source On Resistance-Max: | 0.35Ω |
| Rated Power Dissipation: | 35|W |
| Qg Gate Charge: | 39nC |
| Style d'emballage : | TO-220FP (TO-220FPAB) |
Fonctionnalités et applications
The STP12NM50FP is a N-channel MDmesh™ Power MOSFET. The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products. It has an Operating temperature ranges b/w -65 °C to 150 °C and available in TO-220FP package.
Features:
- 100% avalanche tested
- High dv/dt and avalanche capabilities
- Low input capacitance and gate charge
- Low gate input resistance
- Tight process control and high manufacturing yields
Applications:
- Switching applications
Emballages disponibles
Qté d'emballage(s) :
50 par Tube
Style d'emballage :
TO-220FP (TO-220FPAB)