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STMicroelectronics | SCT014HU65G3AG

Manufacturer Part #

SCT014HU65G3AG

silicon carbide Power MOSFET

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCT014HU65G3AG - Technical Attributes
Attributes Table
Technology: SiC (Silicon Carbide) Schottky
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 110A
Input Capacitance: 920pF
Power Dissipation: 483W
Operating Temp Range: -55°C to +175°C
Package Style:  HU3PAK
Mounting Method: Surface Mount
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
20 Weeks
Minimum Order:
600
Multiple Of:
600
Total
$7,002.00
USD
Quantity
Unit Price
600+
$11.67
Product Variant Information section