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  6. SCTWA35N65G2V-4

STMicroelectronics | SCTWA35N65G2V-4

Manufacturer Part #

SCTWA35N65G2V-4

SCTWA35N Series 650 V 67 mOhm 1 N-Ch Silicon Carbide Power MOSFET - HiP247-4

ECAD Model:
Mfr. Name: STMicroelectronics
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
STMicroelectronics SCTWA35N65G2V-4 - Technical Attributes
Attributes Table
Technology: SiCFET (Silicon Carbide)
Product Status: Active
Fet Type: N-Ch
No. of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain Current: 45A
Input Capacitance: 1370pF
Power Dissipation: 240W
Operating Temp Range: -55°C to +200°C
Package Style:  TO-247-4
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
-1
Factory Lead Time:
17 Weeks
Minimum Order:
600
Multiple Of:
30
Total
$4,758.00
USD
Quantity
Unit Price
30
$8.09
90
$8.03
150
$8.01
600
$7.93
900+
$7.88
Product Variant Information section