text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Silicon Carbide Power Modules (SiC Power Modules)
  6. NXH008T120M3F2PTHG

onsemi | NXH008T120M3F2PTHG

Manufacturer Part #

NXH008T120M3F2PTHG

4 N-Channel 1200 V 129 A 371 W 11.5 mOhm Silicon Carbide MOSFET Module - PIM-29

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code: 2425
Product Specification Section
onsemi NXH008T120M3F2PTHG - Technical Attributes
Attributes Table
Type: Power Module
Technology: SiC (Silicon Carbide) Schottky
Gate-Source Voltage-Max [Vgss]: 1200V
Drain Current: 128A
Operating Temp Range: -40°C to +150°C
Package Style:  Module
Mounting Method: Chassis Mount
Pricing Section
Global Stock:
20
USA:
20
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
1
Multiple Of:
1
Total
$146.06
USD
Quantity
Unit Price
1
$146.06
4
$143.93
10
$142.54
25
$141.16
40+
$139.11
Product Variant Information section