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  5. 4N35SR2VM

onsemi | 4N35SR2VM

Manufacturer Part #

4N35SR2VM

4N35M Series Single Channel 4170 Vrms Transistor with Base Optocoupler - DIP-6

ECAD Model:
Mfr. Name: onsemi
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
onsemi 4N35SR2VM - Technical Attributes
Attributes Table
No of Channels: 1
Isolation Voltage-RMS: 4170V
Output Voltage-Max: 30V
Directional: Uni-Directional
Forward Voltage: 1.18V
Reverse Voltage-Max [Vrrm]: 6V
Average Forward Current-Max: 60mA
Power Dissipation: 270mW
Output Type: Phototransistor
CTR-Min: 40%
Operating Temp-Max: 100°C
Storage Temperature Range: -40°C to +125°C
Package Style:  SMD-6
Mounting Method: Surface Mount
Features & Applications
The 4N35SR2VM is a general purpose phototransistor optocoupler. It consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor.

It has an operating temperature ranging from -55°C to +100°C and its available in DIP-6 package.

Features:

  • UL recognized
  • VDE recognized
  • Collector-Emitter Voltage: 30 V
  • Collector-Base Voltage: 70 V
  • Emitter-Collector Voltage: 7 V

Applications:

  • Power supply regulators
  • Digital logic inputs
  • Microprocessor inputs
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
15 Weeks
Minimum Order:
4000
Multiple Of:
1000
Total
$684.00
USD
Quantity
Unit Price
1,000
$0.174
3,000
$0.171
5,000
$0.169
10,000
$0.167
20,000+
$0.164
Product Variant Information section