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Silicon carbide (SiC) CoolSiC™ MOSFET discretes ideally suited for hard- and resonant-switching topologies

CoolSiC™ SiC MOSFETs in discrete packages build on a state-of-the-art trench semiconductor process optimized to allow for both lowest losses in the application and highest reliability in operation. The temperature independent low switching losses and a fast, internal free-wheeling diode rated for hard commutation make the CoolSiC™ MOSFETs in discrete packages ideal for both hard- and resonant-switching topologies like power factor correction (PFC) circuits, bi-directional topologies and DC-DC converters or DC-AC inverters. An excellent immunity against unwanted parasitic turn-on effects enables a benchmark low dynamic loss even at zero volt turn-off voltage in bridge topologies.

We complete our discrete offering with a range of selected driver IC products fulfilling the needs by the ultrafast SiC MOSFET switching feature. Together, CoolSiC™ MOSFETs and EiceDRIVER™ gate driver ICs leverage the advantage of the technology: improved efficiency, space and weight savings, part count reduction, enhanced system reliability.

CoolSiC™ MOSFETs in discrete housings come along with a fast internal freewheeling diode, thus making hard switching without additional diode chips possible. Due to its unipolar character, the MOSFETs show very low, temperature-independent switching and low conduction losses, especially under partial load conditions.

Our unique silicon carbide (SiC) CoolSiC™ MOSFET discrete products in 1200 V and 650 V are ideally suited for hard- and resonant-switching topologies such as LLC and ZVS, and can be driven like an IGBT or CoolMOS™, using standard drivers. These robust devices offer superior gate oxide reliability enabled by state-of-the-art trench design, best-in-class switching and conduction losses, highest transconductance level (gain), threshold voltage of Vth = 4 V and short-circuit robustness.

  • Low device capacitances
  • Temperature independent switching losses
  • Intrinsic diode with low reverse recovery charge
  • Threshold-free on-state characteristics
  • Superior gate oxide reliability
  • Best in class switching and conduction losses
  • IGBT compatible driving (+18 V)
  • Threshold voltage, Vth > 4 V
  • Short-circuit and avalanche robustness


  • Highest efficiency for reduced cooling effort
  • Longer lifetime and higher reliability
  • Higher frequency operation
  • Reduction in system cost
  • Increased power density
  • Reduced system complexity
  • Ease of design and implementation


Related Material


Infineon — CoolSiC-650 V