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onsemi NCD57090 Isolated High Current Gate Driver

The onsemi NCD57090A, NCD57090B, NCD57090C, NCD57090D, NCD57090E and NCD57090F are high−current single channel IGBT gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications.

The gate drivers accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp (NCD57090A/D/F), negative power supply (NCD57090B) and separate high and low (OUTH and OUTL) driver outputs (NCD57090C/E) for system design convenience.

NCD57090 (A/B/C/D/E/F) accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V. NCD57090 (A/B/C/D/E/F) are available in wide−body SOIC−8 package.


  • High Peak Output Current (+6.5 A/-6.5 A)
  • Short Propagation Delays with Accurate Matching
  • High Transient & Electromagnetic Immunity
  • 5 KVrms On-Chip Galvanic Isolation
  • Wide Bias Voltage Ranges and Input Voltage Range
  • Active Miller Clamp or Negative Gate Voltage or Split Outputs


  • Improves system efficiency
  • Improves PWM signal integrity
  • Ruggedness in fast slew rate high voltage and high current switching applications
  • Saves cost and board space while offering improved performance compared to opto-drivers
  • Offers system design flexibility and allows the usage of commonly available system voltage rails
  • Offers a choice in selecting the right feature in a compact package


  • UPS
  • Motor Control
  • Industrial Power Supplies
  • HVAC
  • Solar Inverters

End Products

  • Industrial Motor Drives
  • Data Center & Server Power Supplies
  • Energy Storage and Charging Systems


Block Diagram − Version A/D/F

onsemi — Simplified Block Diagram, NCD57090A/D/F


Application Schematic − Version A/D/F

onsemi — Simplified Application Schematics, Version A/D/F