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Infineon | IPP60R060C7XKSA1

Manufacturer Part #

IPP60R060C7XKSA1

IPP60R060C7 Series 600 V 35 A 60 mOhm 162 W 68 nC N-Channel MOSFET - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP60R060C7XKSA1 - Technical Attributes
Attributes Table
Product Status: Active
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 600V
Drain-Source On Resistance-Max: 60mΩ
Rated Power Dissipation: 162W
Qg Gate Charge: 68nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 35A
Turn-on Delay Time: 15.5ns
Turn-off Delay Time: 79ns
Rise Time: 11ns
Fall Time: 4ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: CoolMOS
Input Capacitance: 2850pF
Series: CoolMOS C7
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
17 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$1,715.00
USD
Quantity
Unit Price
50
$3.52
150
$3.48
500
$3.43
1,000
$3.40
2,000+
$3.35
Product Variant Information section