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Infineon | IRF9Z24NPBF

Manufacturer Part #

IRF9Z24NPBF

Single P-Channel 55 V 0.175 Ohm 19 nC HEXFET® Power Mosfet - TO-220-3

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2423
Product Specification Section
Infineon IRF9Z24NPBF - Technical Attributes
Attributes Table
Fet Type: P-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 55V
Drain-Source On Resistance-Max: 0.175Ω
Rated Power Dissipation: 45W
Qg Gate Charge: 19nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 12A
Turn-on Delay Time: 13ns
Turn-off Delay Time: 23ns
Rise Time: 55ns
Fall Time: 37ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Technology: Advanced Process Technology
Input Capacitance: 350pF
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
1,750
USA:
1,750
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
26 Weeks
Minimum Order:
50
Multiple Of:
50
Total
$24.00
USD
Quantity
Unit Price
50
$0.48
250
$0.465
1,250
$0.45
2,500
$0.445
7,500+
$0.43
Product Variant Information section