IRFP3703PBF in Tube by Infineon | Mosfets | Future Electronics
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Infineon | IRFP3703PBF

Manufacturer Part #

IRFP3703PBF

Single N-Channel 30 V 2.8 mOhm 209 nC HEXFET® Power Mosfet - TO-247AC

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IRFP3703PBF - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 30V
Drain-Source On Resistance-Max: 2.8mΩ
Rated Power Dissipation: 3.8W
Qg Gate Charge: 209nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 210A
Turn-on Delay Time: 18ns
Turn-off Delay Time: 53ns
Rise Time: 123ns
Fall Time: 24ns
Operating Temp Range: -55°C to +175°C
Gate Source Threshold: 4V
Input Capacitance: 8250pF
Package Style:  TO-247AC
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
18 Weeks
Minimum Order:
4000
Multiple Of:
25
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Tariff charges may apply if shipping to the United States. An estimate of tariff charges will be calculated at checkout.
Total
$7,360.00
USD
Quantity
Unit Price
1
$1.99
30
$1.94
100
$1.92
300
$1.89
1,000+
$1.84
Product Variant Information section