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Manufacturer Part #
IPB80N04S404ATMA1
Single N-Channel 40 V 4.2 mOhm 33 nC OptiMOS™ Power Mosfet - D2PAK
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| Mfr. Name: | Infineon | ||||||||||
| Standard Pkg: | Product Variant Information section Available PackagingPackage Qty:1000 per Reel Package Style:TO-263-3 (D2PAK) Mounting Method:Surface Mount | ||||||||||
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Infineon IPB80N04S404ATMA1 - Product Specification
Shipping Information:
ECCN:
PCN Information:
Detailed change information Subject: Introduction of an additional wafer production and wafer test location at Infineon Technologies Dresden GmbH, Dresden, Germany and an additional wafer diameter for products IPD50N04S4-10, IPD75N04S4-06, IPB80N04S4-04, IPD100N04S4-02 and IPB180N04S4-00 Reason/Motivation: Due to continuously raising demand for Infineon automotive products exceeding the capacity in Villach and Kulim we have to extend wafer production and wafer
Part Status:
Infineon IPB80N04S404ATMA1 - Technical Attributes
| Fet Type: | N-Ch |
| Drain-to-Source Voltage [Vdss]: | 40V |
| Drain-Source On Resistance-Max: | 4.2mΩ |
| Rated Power Dissipation: | 71|W |
| Qg Gate Charge: | 33nC |
| Package Style: | TO-263-3 (D2PAK) |
| Mounting Method: | Surface Mount |
Available Packaging
Package Qty:
1000 per Reel
Package Style:
TO-263-3 (D2PAK)
Mounting Method:
Surface Mount