text.skipToContent text.skipToNavigation

warning.svgOrders shipping outside of United States will be on hold while the company evaluates tariff impacts.
Please contact your salesperson for assistance.

Truck-Icon.svgFree shipping within the continental US over $50. Conditions apply

  1. home
  2. Semiconductors
  3. Discretes
  4. Transistors
  5. Mosfets
  6. BSZ440N10NS3GATMA1

Infineon | BSZ440N10NS3GATMA1

Manufacturer Part #

BSZ440N10NS3GATMA1

Single N-Channel 100 V 44 mOhm 9.1 nC OptiMOS™ Power Mosfet - TSDSON-8

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code: 2318
Product Specification Section
Infineon BSZ440N10NS3GATMA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 100V
Drain-Source On Resistance-Max: 44mΩ
Rated Power Dissipation: 29W
Qg Gate Charge: 9.1nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 5.3A
Turn-on Delay Time: 4.3ns
Turn-off Delay Time: 9.1ns
Rise Time: 1.8ns
Fall Time: 2ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 3.5V
Technology: Si
Height - Max: 1.1mm
Length: 3.4mm
Input Capacitance: 480pF
Mounting Method: Surface Mount
Pricing Section
Global Stock:
20,000
USA:
20,000
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
52+Weeks
Minimum Order:
5000
Multiple Of:
5000
Total
$1,025.00
USD
Quantity
Unit Price
5,000
$0.205
15,000
$0.20
25,000+
$0.197
Product Variant Information section