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Infineon | IPP65R041CFD7XKSA1

Manufacturer Part #

IPP65R041CFD7XKSA1

N-Channel 650 V 50 A 227 W Through Hole CoolMOS™ MOSFET - PG-TO220-3-1

ECAD Model:
Mfr. Name: Infineon
Standard Pkg:
Product Variant Information section
Date Code:
Product Specification Section
Infineon IPP65R041CFD7XKSA1 - Technical Attributes
Attributes Table
Fet Type: N-Ch
No of Channels: 1
Drain-to-Source Voltage [Vdss]: 650V
Drain-Source On Resistance-Max: 41mΩ
Rated Power Dissipation: 227W
Qg Gate Charge: 102nC
Gate-Source Voltage-Max [Vgss]: 20V
Drain Current: 50A
Turn-on Delay Time: 34ns
Turn-off Delay Time: 115ns
Rise Time: 12ns
Fall Time: 3ns
Operating Temp Range: -55°C to +150°C
Gate Source Threshold: 4V
Technology: CoolMOS
Input Capacitance: 4975pF
Series: IPP65R041
Package Style:  TO-220-3 (TO-220AB)
Mounting Method: Through Hole
Pricing Section
Global Stock:
0
USA:
0
On Order:
0
Factory Stock:Factory Stock:
0
Factory Lead Time:
20 Weeks
Minimum Order:
500
Multiple Of:
50
Total
$2,100.00
USD
Quantity
Unit Price
50
$4.28
150
$4.22
250
$4.20
1,000
$4.13
1,500+
$4.08
Product Variant Information section